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Alpha & Omega Semiconductors |
AO4705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4705 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4705 is Pb-free
(meets ROHS & Sony 259 specifications). AO4705L
is a Green Product ordering option. AO4705 and
AO4705L are electrically identical.
Features
VDS (V) = -30V
ID = -10A (VGS = -10V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 16mΩ (VGS = -10V)
SCHOTTKY
VDS (V) = 30V, IF = 5A, VF<0.52V@3A
A 1 8 D/K
S 2 7 D/K
S 3 6 D/K
G 4 5 D/K
SOIC-8
G
www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
DK
SA
MOSFET
-30
±25
-10
-8
-60
3
2
-55 to 150
Schottky
30
5
3.5
30
3
2
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
28
54
21
36
67
25
Max
40
75
30
40
75
30
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4705
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Conditions
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-10A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-20V, ID=-10A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-10A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
Min
-30
-1.7
60
Typ Max Units
-1
-5
±100
-2.5 -3
13
16
10.7
25
26
-0.72
16
21
14
-1
-4.2
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=1.0Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
2076
503
302
2
37.2
7
10.4
12.4
8.2
25.6
12
33
23
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
Irm Maximum reverse leakage current
CT Junction Capacitance
IF=3.0A
VR=24V
VR=24V, TJ=125°C
VR=24V, TJ=150°C
VR=15V
0.48
0.07
4.2
15
120
0.52
0.15
20
60
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
The SOA curve provides a single pulse rating.
Rev 4: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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