AO4704 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 Alpha & Omega Semiconductors |
AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4704 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further. AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
VDS (V) = 30V
ID = 13 A (VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
www.DataSheet4U.com
SOIC-8
S/A 1 8 D/K
S/A 2 7 D/K
S/A 3 6 D/K
G 4 5 D/K
DK
G
SA
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
13
10.4
Pulsed Drain CurrentB
IDM 40
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Diode Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
3.1
2
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Schottky
30
4.4
3.2
30
3.1
2
-55 to 150
Units
V
V
A
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
AO4704
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
36
67
25
Max
40
75
30
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev5: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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제조업체: Alpha & Omega Semiconductors
( aos )
AO4704 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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