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Siemens Semiconductor Group |
PNP Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: PZTA 13, PZTA 14 (NPN)
PZTA 63
PZTA 64
Type
PZTA 63
PZTA 64
Marking
PZTA 63
PZTA 64
Ordering Code
(tape and reel)
Q62702-Z2031
Q62702-Z2032
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VCES
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
1234
BCEC
Package1)
SOT-223
Values
30
30
10
500
800
100
200
1.5
150
– 65 … + 150
≤ 72
≤ 17
Unit
V
mA
W
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 100 µA
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCE = 30 V, IE = 0
VCE = 30 V, IE = 0, TA = 150 ˚C
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
PZTA 63
PZTA 64
PZTA 63
PZTA 64
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
PZTA 63
PZTA 64
Symbol
Values
Unit
min. typ. max.
V(BR)CES 30
–
V(BR)CB0 30
–
V(BR)EB0 10
–
ICB0
––
––
IEB0 – –
hFE
VCEsat
5000
10000
10000
20000
–
–
–
–
––
VBEsat
–
–
–V
–
–
100 nA
10 µA
100 nA
–
–
–
–
–
1.5 V
2.0
fT 125 – – MHz
1) Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
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