PZTA64 반도체 회로 부품 판매점
PNP Transistor
|
|
 JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA64 TRANSISTOR (PNP)
FEATURES
Low Voltage and High Current
High Current Gain Applications
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-30
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-10
IC Collector Current
-500
PC Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-emitter breakdown voltage V(BR)CES IC=-0.1mA,IB=0
Collector cut-off current
ICBO VCB=-30V,IE=0
Emitter cut-off current
IEBO VEB=-10V, IC=0
DC current gain
hFE(1)*
hFE(2)*
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
Collector-emitter saturation voltage VCE(sat)* IC=-100mA,IB=-0.1mA
Base-emitter voltage
VBE* VCE=-5V, IC=-100mA
Transition frequency
fT VCE=-5V,IC=-10mA, f=100MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Min
-30
10000
20000
125
Typ
Max
-100
-100
-1.5
-2
Unit
V
nA
nA
V
V
MHz
A,Nov,2010
|
PDF 파일 내의 페이지 : 총 1 페이지
제조업체: JCET
( jcet )
PZTA64 transistor
데이터시트 다운로드 :
[ PZTA64.PDF ]
[ PZTA64 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
PZTA63
PNP Silicon Darlington Transistors - Siemens Semiconductor Group
PZTA63
PNP Darlington Transistor - Fairchild Semiconductor
PZTA64
PNP Transistor - JCET
PZTA64
PNP Darlington transistor - NXP Semiconductors
PZTA64
PNP Darlington Transistor - Fairchild Semiconductor
PZTA64
PNP Silicon Darlington Transistors - Siemens Semiconductor Group
PZTA64T1
PNP Transistor - Motorola Semiconductors
PZTA65
PNP Darlington Transistor - Fairchild Semiconductor