2SA1930 반도체 회로 부품 판매점
Silicon PNP Power Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Transition Frenquency : fT=200MHz(Typ.)
·Complementary to 2SC5171
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
isc Product Specification
2SA1930
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-2 A
IB Base Current-Continuous
Pc
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1 A
20 W
150 ℃
-55~150 ℃
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1930
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.1A
VBE(on) Base-Emitter Voltage
IC= -1A ; VCE= -5V
ICBO Collector Cutoff Current
VCB= -180V ; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V ; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
Cob Collector Output Capacitance
IE= 0 ; VCB= -10V,f=1MHz
fT Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -5V
MIN TYP. MAX UNIT
-180
V
-1.0 V
-1.5 V
-5 μ A
-5 μ A
100 320
50
16 pF
200 MHz
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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제조업체: Inchange Semiconductor
( isc )
2SA1930 transistor
데이터시트 다운로드 :
[ 2SA1930.PDF ]
[ 2SA1930 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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