NTE5404 반도체 회로 부품 판매점
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate
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 NTE |
NTE5400 thru NTE5406
Silicon Controlled Rectifier (SCR)
0.8 Amp Sensitive Gate
Description:
The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional
gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
rated voltages up to 600 volts.
These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca-
pabilities.
Available in a TO–92 plastic package, these devices feature excellent environmental stress and tem-
perature cycling characteristics and, coupled with their small size and electrical performance, lend
themselves to various types of control functions encountered with sensors, motors, lamps, relays,
counters, triggers, etc.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +100°C), VDRXM
NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . . 8A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
I2t for Fusing Reference
IRRM
IDRXM
VTM
IHOLD
IGT
VGT
I2t
VRRM = Max, VDRXM = Max,
TC = +100°C, RG–K = 1kΩ
TC = +25°C, IT = 1.2A (Peak)
TC = +25°C
VD = 6VDC, RL = 100Ω, TC = +25°C
VD = 6VDC, RL = 100Ω, TC = +25°C
> 1.5msoc
–
–
–
–
–
–
–
– 50 µA
– 50 µA
– 1.7 V
– 5 mA
50 200 µA
– 0.8 V
– 0.15 A2sec
Critical Rate of Applied
Forward Voltage
dv/dt TC = +100°C
(critical)
– 5 – V/µs
.210
(5.33)
Max
.135 (3.45) Min
Seating
Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
KG A
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: NTE
( nte )
NTE5404 rectifier
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[ NTE5404.PDF ]
[ NTE5404 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE5400
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5401
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5402
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5403
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5404
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5405
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5406
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate - NTE
NTE5408
Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate - NTE