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NTE5408 반도체 회로 부품 판매점

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate



NTE 로고
NTE
NTE5408 데이터시트, 핀배열, 회로
NTE5408 thru NTE5410
Silicon Controlled Rectifier (SCR)
3 Amp Sensitive Gate
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200µA.
These NTE SCRs are reverse–blocking triode thyristors and may be switched from off–state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +100°C), VDRXM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 40A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W


NTE5408 데이터시트, 핀배열, 회로
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak OffState Current
Maximum OnState Voltage
DC Holding Current
DC GateTrigger Current
DC GateTrigger Voltage
Gate Controlled TurnOn Time
I2t for Fusing Reference
IRRM
IDRXM
VTM
IHOLD
IGT
VGT
tgt
I2t
VRRM = Max, VDRXM = Max,
TC = +100°C, RGK = 1k
IT = 10A (Peak)
RGK = 1000
VD = 6VDC, RL = 100
VD = 6VDC, RL = 100
IG x 3GT
For SCR Protection
Critical Rate of Applied
Forward Voltage
dv/dt RGK = 1k, TC = +100°C
(critical)
Min Typ Max Unit
– – 0.75 mA
– – 0.75 mA
– – 2.2 V
– – 5 mA
– – 200 µA
– – 0.8 V
1.2 µs
– – 2.6 A2sec
5 V/µs
.250
(6.35)
Max
.500
(12.7)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
Cathode
45°
.019 (0.5)
Gate
Anode
.031 (.793)




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NTE5408 rectifier

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상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



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