UGF8CT 반도체 회로 부품 판매점
Ultrafast Rectifier ( Diode )
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 Vishay Siliconix |
UG(F,B)8AT thru UG(F,B)8DT
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
ITO-220AC
UG8xT
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
UGF8xT
PIN 1
PIN 2
2
1
UGB8xT
PIN 1
1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
www.DataSheet4U.com trr
VF
TJ max.
8.0 A
50 V to 200 V
150 A
20 ns
0.95 V
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG8AT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min
TJ, TSTG
VAC
UG8BT UG8CT
100 150
70 105
100 150
8.0
150
- 55 to + 150
1500
UG8DT
200
140
200
UNIT
V
V
V
A
A
°C
V
Document Number: 88765 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
www.vishay.com
1
UG(F,B)8AT thru UG(F,B)8DT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG8AT UG8BT UG8CT
Maximum instantaneous
forward voltage (1)
8.0 A
20.0 A
5.0 A
TJ = 150 °C
VF
1.0
1.2
0.95
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum reverse recovery time
TJ = 25 °C
TJ = 100 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 8.0 A, VR = 30 V,
dI/dt = 50 A/µs,
Irr = 10 % IRM
TJ = 25 °C
TJ = 100 °C
IR
trr
trr
10
300
20
30
50
Maximum recovered stored
charged
Typical junction capacitance
IF = 8.0 A, VR = 30 V,
dI/dt = 50 A/µs
4.0 V, 1 MHz
TJ = 25 °C
TJ = 100 °C
Qrr
CJ
20
45
45
UG8DT UNIT
V
µA
ns
ns
nC
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG8AT
Typical thermal resistance from junction to case
RθJC
4.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UGF8AT
5.0
UGB8AT
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
UG8DT-E3/45
1.80
ITO-220AC
UGF8DT-E3/45
www.DaTtaOS-2h6e3eAt4BU.com UGB8DT-E3/45
1.95
1.33
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
UGB8DT-E3/81
UG8DTHE3/45 (1)
UGF8DTHE3/45 (1)
UGB8DTHE3/45 (1)
UGB8DTHE3/81 (1)
1.33
1.80
1.95
1.33
1.33
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape reel
Tube
Tube
Tube
Tape reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88765
Revision: 09-Nov-07
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PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Vishay Siliconix
( vishay )
UGF8CT rectifier
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