UGF8CT 반도체 회로 부품 판매점
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
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 General Semiconductor |
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGF8AT THRU UGF8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
0.405 (10.27)
0.383 (9.72)
ITO-220AC
0.140 (3.56)
0.130 (3.30) DIA.
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
PIN
12
0.670 (17.2)
0.646 (16.4)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
DI
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
0.022 (0.55)
0.014 (0.36)
FEATURES
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
♦ Ultrafast reverse
recovery time for high efficiency
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Glass passivated chip junction
♦ High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
MECHANICAL DATA
Case: ITO-220AC molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Mounting Torque: 5in. - lbs. max.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
wwMawta.TDxCaim=ta1uS0mh0e°aeCvt4eUra.cgoemforward rectified current
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at 8.0
20A
5.0A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
Maximum recovered stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJC
TJ, TSTG
UGF8AT
50
35
50
UGF8BT
100
70
100
UGF8CT
150
105
150
8.0
UGF8DT
200
140
200
UNITS
Volts
Volts
Volts
Amps
150.0
1.00
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
45.0
5.0
-55 to+150
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
4/98
RATINGS AND CHARACTERISTIC CURVES UGF8AT THRU UGF8DT
FIG. 1 - FORWARD CURRENT DERATING
CURVE
12
RESISTIVE OR INDUCTIVE LOAD
10
1,000
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
8.0
6.0
100
4.0
2.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, °C
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10 TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4
www.DataSheet4U.com
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.6
1,000
100
10
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
TJ=125°C
TJ=100°C
1
TJ=25°C
0.1
0.01
0
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
60
IF=4.0A
VR=30V
50
di/dt= 150A/µs
di/dt=100A/µs
di/dt=20A/µs
40 di/dt=50A/µs
di/dt=100A/µs
30 di/dt=50A/µs
di/dt=150A/µs
20
10
0
0
di/dt=20A/µs
trr
Qrr
25 50 75 100 125 150 175
JUNCTION TEMPERATURE, °C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
100
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
1
0.1
0.01
0.1 1 10
REVERSE VOLTAGE, VOLTS
100
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UGF8CT rectifier
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상호 : 아이지 인터내셔날
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