MUR180 반도체 회로 부품 판매점
1.0A Axial Leaded High Efficiency Rectifier
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 Sunmate |
MUR170-MUR1100
1.0A Axial Leaded High Efficiency Rectifier
Features
· Low cost
· Diffus ed junction
· Low leakage
· Low forward voltage drop
· High crrent capability
· Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
ABA
C
D
Mechanical Data
· Cas e:JEDEC DO--41,m olded plas tic
· Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
· Polarity: Color band denotes cathode
· Weight: 0.012 ounces ,0.34 gram s
· Mounting pos ition: Any
DO-41
Dim Min Max
A 25.40 ¾
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MUR170 MUR180 MUR190 MUR1100 UNITS
Maximum recurrent peak reverse voltage
VRRM
700
Maximum RMS voltage
V R MS
490
Maximum DC blocking voltage
VDC
700
Maximum average forw ard rectif ied current
9.5mm lead length, @TA=75
IF (AV)
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@ TJ =125
Maximum instantaneous f orw ard voltage
@ 1.0A
IF SM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
IR
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
CJ
RθJA
TJ
Storage temperature range
TSTG
N OTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
1 of 2
800 900
560 630
800 900
1.0
30.0
1.7
10.0
100.0
75
15
60
- 55 ----- + 150
- 55 ----- + 150
1000
700
1000
V
V
V
A
A
V
A
ns
pF
/W
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 10
N 1. N 1.
+0.5A
trr
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
TJ=25
Pulse Width=300µS
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT Z
50
40
30
20
10
0
1
TJ=125
8.3ms Single Half
Sine-Wave
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
2of2
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( sunmate )
MUR180 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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