MUR180 반도체 회로 부품 판매점
ULTRAFAST RECTIFIERS
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 Motorola Semiconductors |
MUR105 MUR150
MUR11O MUR160
/’-’-+ MUR115 MUR170
MUR120 MUR180
I I MUR130 MuR~90
!
MUR140 MU~$l.$f.i’$?,~1,0. 0
SWITCHMODE POWER RECTIFIERS
. . . designed for use in switching power supplies, inverters and
as free wheeling diodes, these state-of-the-art devices have the
following features:
q Ultrafast 2!5, 50 and 75 Nanosecond Recovery Times
. 175°C Operating Junction Temperature
~~, :i,.+
q LOW Forward Voltage
q Low Leakage Current
J. pQJ> .}“@$~?. ,&..
. High Temperature Glass Passivated Junction
q Reverse Voltage to 1000 Volts
.<~<a),. +~i,p! ..
,:\$~+,,,‘&>,.,~q..>?.,:;*$+\,,J>,,~.,),i>.,Y$~~:%‘$W!$.&l\::,)\\>\ +\
.f:~,:~\.t&)
-(*-Ji,,.
L---N ,. ,~>,.$.,
.,:,,.,,}$..,.>.:.‘;.*X.-...F.<..,,.~?.<t&*.j\.,+,.$,+~y8,i.\).,~.:.y:,.,~,,.,+,i’),:t\)\..i,
.,-,,. ,..,.,Ji:l
CASE 59-04
PLASTIC PACKAGE
Rating
{‘,$d?$+ye{,.a*:,.>*,$i,‘,..\.,l,.,P.+\P:Y
Peak Repetitive Reverse [email protected].$
Working Peak Reverse Volta@,i$$#
DC Blocking Voltage
,,@~”)k?t~”
Average Rectified Forw@~: Cu$~nt (Square Wave
Mounting Method #&#er,$@ote 1)
Nonrepetitive Pe~~~Q~&eCurrent
(Surge applied$$fat~d
single pha~~.alHl)
load condition% halfwave,
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
105 110 115 120 130 140 150 160 170 180 190 1100 Unit
50 100 150 200 300 400 500 600 700 800 900 1000 volts
l. O@TA=
13(Y’C
l.O@TA = 12WC
35
l.O@TA = 9VC Amps
Amps
–65to +175
‘c
Ma&%um Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF=l.O Amp, T.J=1500C)
(iF=l.O Amp, TJ=2Y’C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 150”C)
(Rated dc Voltage, TJ = 25C)
/
,/
,/”
/’
Maximum Reverse Recovery Time
(IF= 1.0 Amp, di/dt= 50 Amp/pa)
(IF=O.5 Amp, iR= 1.0 Amp, IREC=O.25 A)
Maximum Forward Recovery Time
(IF=I.O A, di/dt = 100 /Vps, IREC to 1.0 V)
(1)Pulse Test: Pulse Width = 300 KS, Duty Cycle <2.0%
Switchmode is a trademark of Motorola Inc.
RgJA
vF
iu
trr
tfr
0.710
0.875
50
2.0
35
25
25
See Note 1
“CM
1.05
1.25
150
5.0
75
50
50
~ MOTOROLA INC 1984
A
/.LA
600
10
+-----
DS3533R2
MURI05, 110 AND 115
—
FIGURE 1 — TYPICAL FORWARD VOLTAGE
10 1 I / 1/ /
/
7.0 1/ /
,// /
5.0 / //
// ‘/
3.0 r
TJ = 175°C
2.0
/, ‘k –’ 25°C
1.0
~
~ 0.7
i=
5 0.5
aK3u
2 0.3
:
~ 0.2
c~2n
$z
= 0.1
g<
z 0.07
,&
0.05
0.03
II
III
I
i II
I II
i{ I
// /
//, ~
I
iH
/ //
/
I
/ /1
/ I/
/
// /
/’ /
>,~,,“*,
,..%,
k,
0.02 I d
/ //
0.01 / H
‘:t~,,
0.3 0.4 0.5 0.6 0.7 0.8 O.* ii 1.1 1.2 1.3
VF, INSTANTANEOUS V@@~@bLTS)
\ ..
FIGURE 2 — TYPICAL REVERSE CURRENT*
80
1{
[1
40
20
\ !!
8.0
~ 4,0
s 2.0
= 0,8 -
% 0.4
3 0.2
r
1
!
I
II
%E
0.08–u
*The curves shown are typical
device in the voltage grouping.
for the higheaf VOI
Typical reverse cu
% 0.04 – for lower voltage seletiions can be aatim?@d
g f).lJ2 – these same curves if ‘JR i
—F O.OO8-
1
r
I
0.004
0.002
0.001
t
0 20 40
1I
II
TJ = f7&~
1
1
..
0 50 100 150 200
TA, AMBlENT TEMPERATURE
,-----
lF(Av),AVERAGE FORWARD CURRENT (AMPS)
50 -
40
30
\
20
FIGURE 5 — TYPICAL CAPACITANCE
1
TJ = 250c
\
\
8’.:
8.0
7.0
8.0
5.0
-o
\
~~
10 20 30 40
VR,REVERSE VOLTAGE (VOLTS)
50
MOTOROLA
@
Semiconductor Products Inc.
|
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제조업체: Motorola Semiconductors
( motorola )
MUR180 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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