STC62WV256 반도체 회로 부품 판매점
VERY LOW POWER/VOLTAGE CMOS SRAM
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 STC |
www.DataSheet4U.com
STC
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
STC62WV256
FEATURES
DESCRIPTION
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
PRODUCT FAMILY
The STC62WV256 is a high performance , very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by active LOW chip enable (CE),
active LOW output enable (OE) and three-state output drivers.
The STC62WV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The STC62WV256 is available in the DICE form, JEDEC standard 28pin
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and 8mm x
13.4mm TSOP (normal type).
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STC62WV256SC
STC62WV256TC
STC62WV256PC
STC62WV256JC
STC62WV256DC
STC62WV256SI
STC62WV256TI
STC62WV256PI
STC62WV256JI
STC62WV256DI
0 O C to +70 O C
-40 O C to +85 O C
Vcc
RANGE
SPEED
(ns)
Vcc=
3.0V
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=
5.0V
Vcc=
3.0V
Vcc=
5.0V
Vcc=
3.0V
2.4V ~ 5.5V
70
1uA
DataSheet4U.com
2.4V ~ 5.5V
70
2uA
0.2uA 35mA 20mA
0.4uA 40mA 25mA
PKG
TYPE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICSEOP-28DataShee
TSOP-28
PDIP-28
SOJ-28
DICE
PIN CONFIGURATIONS
BLOCK DIAGRAM
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
62WV256SC
62WV256SI
7 62WV256PC
8 62WV256PI
9
62WV256JC
62WV256JI
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
VCC 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
DataSheet4U.com
STC62WV256TC
STC62WV256TI
28 A10
27 CE
26 DQ7
25 DQ6
24 DQ5
23 DQ4
22 DQ3
21 GND
20 DQ2
19 DQ1
18 DQ0
17 A0
16 A1
15 A2
A5
A6
A7
A12
A14
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
Vdd
Gnd
Address
Input
Buffer
18
Row
Decoder
512
Memory Array
512 x 512
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
512
8 Column I/O
Write Driver
Sense Amp
8
64
Column Decoder
12
Address Input Buffer
A4 A3 A2 A1 A0 A10
STC International Limited. reserves the right to modify document contents without notice.
R0201-STC62WV256
1
Revision 2.3
Jan. 2004
STCwww.DataSheet4U.com
PIN DESCRIPTIONS
Name
A0-A14 Address Input
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
DQ0 – DQ7 Data Input/Output
Ports
Vcc
Gnd
STC62WV256
Function
These 15 address inputs select one of the 32768 x 8-bit words in the RAM
CE is active LOW. Chip enables must be active when data read from or write to the
device. If chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
These 8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
et4U.com TRUTH TABLE
MODE
Not selected
Output Disabled
Read
Write
WE
X
H
H
L
DataSheet4U.com
CE OE
HX
LH
LL
LX
I/O OPERATION
High Z
High Z
DOUT
DIN
DataShee
Vcc CURRENT
ICCSB, ICCSB1
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
VTERM
TBIAS
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
RATING
-0.5 to
Vcc+0.5
-40 to +125
TSTG
Storage Temperature
-60 to +150
PT Power Dissipation
1.0
IOUT
DC Output Current
20
UNITS
V
OC
OC
W
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
DataSheetm4aUxi.mcuomm rating conditions for extended periods may affect
reliability.
OPERATING RANGE
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
2.4V ~ 5.5V
2.4V ~ 5.5V
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX.
6
8
UNIT
pF
pF
1. This parameter is guaranteed and not 100% tested.
R0201-STC62WV256
2
Revision 2.3
Jan. 2004
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( stc )
STC62WV256 ram
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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