AUIRFZ48N 반도체 회로 부품 판매점
HEXFET Power MOSFET
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 International Rectifier |
AUTOMOTIVE GRADE
PD - 97732
AUIRFZ48N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs uti-
lizes the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reli-
able device for use in Automotive and a wide variety of
other applications.
G
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max
S ID
55V
11m
14m
69A
D
G
Gate
DS
G
TO-220AB
AUIRFZ48N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation
specified.
ratings
are
measured
under
board
mounted
and
still
air
conditions.
Ambient
temperature
(TA)
is
25°C,
unless
otherwise
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RJC
RCS
RJA
Parameter
iJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
69
49
270
160
1.1
± 20
265
290
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.95
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
10/3/11
AUIRFZ48N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
e––– 0.054 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 11 14 m VGS = 10V, ID = 40A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 100μA
gfs Forward Transconductance
24 ––– ––– S VDS = 10V, ID = 40A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
––– 42 63
ID = 40A
e––– 9.0 ––– nC VDS = 44V
––– 17 –––
VGS = 10V
––– 12 –––
VDD = 28V
––– 62 –––
ID = 40A
e––– 37 ––– ns RG = 7.6
––– 37 –––
VGS = 10V
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
D
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1900 –––
––– 470 –––
––– 120 –––
––– 2180 –––
––– 340 –––
––– 610 –––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 69
MOSFET symbol
A showing the
ÃISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 270
integral reverse
––– ––– 1.3
––– 71 110
––– 230 345
p-n junction diode.
eV TJ = 25°C, IS = 40A, VGS = 0V
ens TJ = 25°C, IF = 40A, VDD = 28V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.24mH
RG = 50, IAS = 40A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
2
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L = 0.24mH, RG = 50, IAS = 40A, VGS =10V.
R is measured at TJ approximately 90°C.
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