AUIRFZ48Z 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 International Rectifier |
PD - 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up
to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
AUIRFZ48ZS
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 11mΩ
S ID
61A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
DD
DS
G
TO-220AB
AUIRFZ48Z
DS
G
D2Pak
AUIRFZ48ZS
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
61 A
43
240
91 W
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.61
± 20
73
120
See Fig.12a,12b,15,16
7.2
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
kRθJC Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11
AUIRFZ48Z/ZS
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage 55
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
0.054
8.6
–––
–––
11
V
V/°C
mΩ
VGS = 0V, ID = 250μA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 37A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
gfs
Forward Transconductance
24 ––– –––
S VDS = 25V, ID = 37A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 43 64 nC ID = 37A
Qgs Gate-to-Source Charge
––– 11 16
VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– 16 24
VGS = 10V
td(on)
Turn-On Delay Time
––– 15 ––– ns VDD = 28V
tr Rise Time
––– 69 –––
ID = 37A
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
––– 35 –––
––– 39 –––
––– 4.5 –––
fRG = 12Ω
VGS = 10V
nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss Input Capacitance
––– 1720 ––– pF VGS = 0V
Coss Output Capacitance
––– 300 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 160 –––
ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 1020 –––
––– 230 –––
––– 380 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 61
MOSFET symbol
D
(Body Diode)
A showing the
ÃISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 240
––– ––– 1.3
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 37A, VGS = 0V
trr Reverse Recovery Time
––– 20 31
ns TJ = 25°C, IF = 37A, VDD = 30V
fQrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/μs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L =0.11mH,
RG = 25Ω, IAS = 37A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 37A, di/dt ≤ 920A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L =0.11mH, RG = 25Ω, IAS = 37A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is rated at TJ of approximately 90°C.
2 www.irf.com
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AUIRFZ48Z mosfet
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