RFP70N03 반도체 회로 부품 판매점
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
|
|
 Harris |
SEMICONDUCTOR
RFP70N03, RF1S70N03,
RF1S70N03SM
December 1995
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 30V
• rDS(ON) = 0.010Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan-
nel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approach-
ing those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Symbol
D
G
Formerly developmental type TA49025.
S
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = +25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
RFP70N03, RF1S70N03,
RF1S70N03SM
30
30
±20
70
200
(Refer to UIS Curve)
150
1.0
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-45
File Number 3404.2
Specifications RFP70N03, RF1S70N03, RF1S70N03SM
Electrical Specifications At Case Temperature (TC) = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Diode
Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS=30V
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±20V
ID = 70A, VGS = 10V
VDD = 15V, ID = 70A
RL = 0.214Ω, VGS = +10V
RGS = 2.5Ω
VGS = 0 to 20V
VGS = 0 to 10V
VDD = 24V,
ID = 70A,
RL = 0.343Ω
VGS = 0 to 2V
VDS = 25V, VGS = 0V
f = 1MHz
30
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
20
20
40
25
-
215
120
6.5
3300
1750
750
-
-
MAX UNITS
-V
4V
1 µA
50 µA
100 nA
0.010
Ω
80 ns
- ns
- ns
- ns
- ns
125 ns
260 nC
145 nC
8.0 nC
- pF
- pF
- pF
1.0 oC/W
80 oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Diode Forward Voltage
Reverse Recovery Time
VSD ISD = 70A
tRR ISD = 70A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
3-46
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Harris
( harris )
RFP70N03 mosfet
데이터시트 다운로드 :
[ RFP70N03.PDF ]
[ RFP70N03 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
RFP70N03
N-Channel Power MOSFETs - Fairchild Semiconductor
RFP70N03
70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs - Intersil Corporation
RFP70N03
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs - Harris
RFP70N06
N-Channel Power MOSFET / Transistor - Fairchild Semiconductor
RFP70N06
70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs - Intersil Corporation
RFP70N06
N-Channel Enhancement-Mode Power MOSFETs - Harris