RFP70N06 반도체 회로 부품 판매점
N-Channel Enhancement-Mode Power MOSFETs
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 Harris |
SEMICONDUCTOR
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
December 1995
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 60V
• rDS(on) = 0.014Ω
• Temperature Compensated PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06
TO-262AA
F1S70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
60
60
±20
70
Refer to Peak Current Curve
Refer to UIS Curve
150
1.0
-55 to +175
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-51
File Number 3206.3
Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
ID = 250µA, VGS = 0V
60 - - V
VGS(TH)
IDSS
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
2
-
-
- 4V
- 1 µA
- 50 µA
IGSS
VGS = ±20V
- - 100 nA
rDS(ON)
ID = 70A, VGS = 10V
-
-
0.014
Ω
tON
tD(ON)
tR
VDD = 30V, ID = 70A
RL = 0.43Ω, VGS = +10V
RGS = 2.5Ω
- - 125 ns
- 12 - ns
- 50 - ns
tD(OFF)
- 40 - ns
tF - 15 - ns
tOFF - - 125 ns
QG(TOT)
QG(10)
QG(TH)
VGS = 0V to 20V VDD = 48V,
ID = 70A,
VGS = 0V to 10V RL = 0.68Ω
VGS = 0V to 2V
-
185 215
nC
-
100 115
nC
- 5.5 6.5 nC
CISS
COSS
VDS = 25V, VGS = 0V
f = 1MHz
- 3000 -
- 900 -
pF
pF
CRSS
RθJC
RθJA
- 300 -
pF
- - 1.0 oC/W
- - 80 oC/W
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
tRR
TEST CONDITIONS
ISD = 70A
ISD = 70A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
3-52
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RFP70N06 mosfet
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[ RFP70N06.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
RFP70N03
N-Channel Power MOSFETs - Fairchild Semiconductor
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70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs - Intersil Corporation
RFP70N03
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs - Harris
RFP70N06
N-Channel Power MOSFET / Transistor - Fairchild Semiconductor
RFP70N06
70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs - Intersil Corporation
RFP70N06
N-Channel Enhancement-Mode Power MOSFETs - Harris