TF2306 반도체 회로 부품 판매점
N-Channel MOSFET
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 Tuofeng Semiconductor |
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2306
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
30 0.057 @ VGS = 10 V
0.094 @ VGS = 4.5 V
-
ID (A)
3.5
2.8
FEATURES
D Power MOSFET
D 100% Rg Tested
(SOT-23)
G1
S2
3D
Top View
TF2306
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
"20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 25_C
ID
IDM
IS
PD
TJ, Tstg
3.5
16
1.25
1.25
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
t v 5 sec
Steady State
Symbol
RthJA
Typical
130
Maximum
100
Unit
_C/W
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2306
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgt
Qgs
Qgd
Rg
Ciss
Coss
Crss
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 25 V, VGS = 0 V
VDS w 4.5 V, VGS = 10 V
VDS w 4.5 V, VGS = 4.5 V
VGS = 10 V, ID = 3.5 A
VGS = 4.5 V, ID = 2.8 A
VDS = 4.5 V, ID = 3.5 A
IS = 1.25 A, VGS = 0 V
VDS = 15 V, VGS = 5 V, ID = 3.5 A
VDS = 15 V, VGS = 10 V, ID = 3.5 A
VDS = 15 V, VGS = 0 V, f= 1 MHz
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Min Typ Max Unit
30
V
1 1.8
"100
nA
1 mA
6
4A
0.057
0.094
W
6.9 S
0.8 1.2 V
4.2 7
8.5 20
nC
1.9
1.35
0.5 2.4 W
555
120 pF
60
9 20
7.5 18
17 35 ns
5.2 12
2
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( tuofeng )
TF2306 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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