TF2302 반도체 회로 부품 판매점
N-Channel MOSFET
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 Tuofeng Semiconductor |
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2302
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = 4.5 V
20
0.090 @ V GS = 2.5 V
ID (A)
3.0
2.0
(SOT-23-3L)
(SOT-23)
G1
S2
3D
Top View
TF2302 (A2sHB )*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)b
TA= 25_C
ID
3.0
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
IDM 10
IS 1.6
Power Dissipationb
TA= 25_C
PD
1.25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
Symbol
RthJA
Limit
100
166
Unit
V
A
W
_C
Unit
_C/W
2-1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2302
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS =16 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 4.5 V
VDS w 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.0 A
VDS = 5 V, ID = 3.0 A
IS = 1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = 10 V, RL = 5.5 W
ID ^ 3.6 A, VGEN = 4.5 V, RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%..
Min Typ Max Unit
20
V
0.5 1.0
"100
nA
50
nA
6
A
4
0.060
0.085
0.065
0.090
W
10 S
1.28
V
5.4
0.65
1.60
340
115
33
10
nC
pF
12 25
36 60
ns
34 60
10 25
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제조업체: Tuofeng Semiconductor
( tuofeng )
TF2302 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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