TPCF8001 반도체 회로 부품 판매점
Notebook PC Applications
|
|
 Toshiba Semiconductor |
TPCF8001
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8001
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 8 S (typ.)
• Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V
(VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 5, refer to the next page
30
30
±20
7
28
2.5
0.7
8
3.5
0.25
150
−55~150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-01-16
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Symbol
Rth (ch-a)
Rth (ch-a)
Max. Unit
50.0 °C/W
178.6 °C/W
Marking (Note 5)
Lot code (month) Lot No.
Part No.
(or abbreviation code)
F2A
Product-specific code
TPCF8001
www.DataSheet4U.com
Pin #1
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.5 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: “●” on the lower left of the marking indicates Pin 1.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2 2007-01-16
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Toshiba Semiconductor
( toshiba )
TPCF8001 data
데이터시트 다운로드 :
[ TPCF8001.PDF ]
[ TPCF8001 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
TPCF8001
Notebook PC Applications - Toshiba Semiconductor
TPCF8002
Notebook PC Applications - Toshiba Semiconductor
TPCF8003
Notebook PC Applications - Toshiba Semiconductor
TPCF8004
MOSFETs - Toshiba Semiconductor