ESD11B 반도체 회로 부품 판매점
TVS Diode ( Rectifier )
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 ON Semiconductor |
ESD11B
Transient Voltage
Suppressors
Micro−Packaged Diodes for ESD Protection
The ESD11B Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space comes at a premium.
Specification Features
• Low Capacitance 12 pF
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.0 V
• Low Leakage
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• IEC61000−4−4 Level 4 EFT Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 3 Requirements
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Contact
Air
Value
±15
±15
Unit
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
°PD°
RqJA
TJ, Tstg
TL
250 mW
400 °C/W
−40 to +125 °C
260 °C
Peak Pulse Current, 8 x 20 ms double Ipp 2.0 A
exponential waveform (Figure 5)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
www.onsemi.com
DSN2
CASE 152AA
MARKING
DIAGRAM
PIN 1
XXXX
YYY
XXXX = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping†
ESD11B5.0ST5G DSN2 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 7
1
Publication Order Number:
ESD11B/D
ESD11B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
IT
VC VBR VRWM IR IIRT VRWM VBR VC V
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
VRWM IR (mA)
(V) @ VRWM
VBR (V) @ IT
(Note 2)
IT
C (pF)
VC (V) @
1A
VC
Device
Device
Marking Max
Max
Max Per IEC61000−4−2
Min mA Typ Max (Note 3)
(Note 4)
ESD11B5.0ST5G
11B5
5.0
1.0
5.8
1.0 12 13.5
10
Figures 1 and 2
See Below
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveforms per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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ESD11B tvs-diode
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[ ESD11B.PDF ]
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