SZMMBZ16V 반도체 회로 부품 판매점
40 Watt Peak Power Zener Transient Voltage Suppressors
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 ON Semiconductor |
MMBZ16V, SZMMBZ16V
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 15.2 V to 16.80 V
• Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
• ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
http://onsemi.com
SOT−23
CASE 318
STYLE 12
CATHODE 1
CATHODE 2
3 ANODE
MARKING DIAGRAM
XXXMG
G
1
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
MMBZ16VAL/D
MMBZ16V, SZMMBZ16V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
Ppk
°PD°
40 W
225 mW°
1.8 mW/°C
Thermal Resistance Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
RqJA
°PD°
556 °C/W
300 °mW
2.4 mW/°C
Thermal Resistance Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device
Marking
Package
Shipping†
MMBZ16VALT1G
16A
SZMMBZ16VALT1G*
16A
SOT−23
MMBZ16VTALT1G
16T (Pb−Free)
3,000 / Tape & Reel
SZMMBZ16VTALT1G*
16T
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2
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