SZMMBZ15VDLT1G 반도체 회로 부품 판매점
40 Watt Peak Power Zener Transient Voltage Suppressors
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 ON Semiconductor |
MMBZ15VDLT1G,
MMBZ27VCLT1G,
SZMMBZ15VDLT1G,
SZMMBZ27VCLT1G
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Cathode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
The MMBZ27VCLT1G/SZMMBZ27VCLT1G can be used to
protect a single wire communication network form EMI and ESD
transient surge voltages.
The MMBZ27VCLT1G/SZMMBZ27VCLT1G is recommended by
the Society of Automotive Engineers (SAE), February 2000, J2411
“Single Wire Can Network for Vehicle Applications” specification as
a solution for transient voltage problems.
Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 12.8 V, 22 V
• Standard Zener Breakdown Voltage Range − 15 V, 27 V
• Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
• ESD Rating of Class 3B (exceeding 16 kV) per the Human
Body Model
• Low Leakage < 100 nA
• Flammability Rating: UL 94 V−O
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−23
CASE 318
STYLE 9
ANODE 1
ANODE 2
3 CATHODE
MARKING DIAGRAM
XXX MG
G
1
XXX = 15D or 27C
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
MMBZ15VDLT1G
SOT−23
(Pb−Free)
SZMMBZ15VDLT1G SOT−23
(Pb−Free)
MMBZ15VDLT3G
SOT−23
(Pb−Free)
Shipping†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
SZMMBZ15VDLT3G SOT−23
(Pb−Free)
MMBZ27VCLT1G
SOT−23
(Pb−Free)
SZMMBZ27VCLT1G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 12
1
Publication Order Number:
MMBZ15VDLT1/D
Free Datasheet http://www.datasheet4u.com/
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
Ppk
°PD°
40 Watts
225 mW
1.8 mW/°C
Thermal Resistance Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
RqJA
°PD°
556 °C/W
°
300 mW
2.4 mW/°C
Thermal Resistance Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
VBR
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Device*
Device
Marking
VRWM
Volts
IR @ VRWM
nA
VBR (Note 4) (V)
Min Nom Max
@ IT
mA
MMBZ15VDLT1G/T3G
15D 12.8
100
14.3 15 15.8 1.0
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
Device*
Device
Marking
VRWM
Volts
IR @ VRWM
nA
VBR (Note 4) (V)
Min Nom Max
@ IT
mA
MMBZ27VCLT1G/T3G 27C 22
50 25.65
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
27
28.35
1.0
VC @ IPP (Note 5)
VC IPP
VA
21.2 1.9
VC @ IPP (Note 5)
VC IPP
VA
38 1.0
VBR
mV/5C
12
VBR
mV/5C
26
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/
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