TISP3180L 반도체 회로 부품 판매점
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
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 Power Innovations Limited |
Copyright © 1997, Power Innovations Limited, UK
TISP3180L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3180L
V(Z) V(BO)
VV
145 180
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
8/20 µs
10/160 µs
10/560 µs
0.2/310 µs
10/700 µs
10/1000 µs
STANDARD
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
100
60
45
38
50
50
50
35
device symbol
q UL Recognized, E132482
description
The TISP3180L is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of two bidirectional
suppressor elements connected to a Common
(C) terminal. They will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP3180L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Operating free - air temperature range
Storage temperature range
Lead temperature 1.5 mm from case for 10 s
SYMBOL
ITSP
ITSM
diT/dt
TJ
Tstg
Tlead
VALUE
UNIT
100
60
50
38
50
50
45
35
10
250
150
0 to 70
-40 to +150
260
A
A rms
A/µs
°C
°C
°C
°C
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics for the A and B terminals, TJ = 25°C
PARAMETER
Reference zener
VZ voltage
Off-state leakage
ID current
Coff Off-state capacitance
IZ = ± 1mA
VD = ± 50 V
VD = 0
TEST CONDITIONS
f = 1 kHz
(see Note 4)
MIN TYP
± 290
MAX
UNIT
V
± 10
0.5 5
µA
pF
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25°C
VZ
∝VZ
V(BO)
I(BO)
VTM
IH
dv/dt
ID
Coff
PARAMETER
Reference zener
voltage
Temperature coefficient
of reference voltage
Breakover voltage
Breakover current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
Off-state capacitance
IZ = ± 1mA
(see Notes 5 and 6)
(see Note 5)
IT = ± 5 A
(see Note 5)
(see Note 7)
VD = ± 50 V
VD = 0
TEST CONDITIONS
(see Notes 5 and 6)
f = 1 kHz
(see Note 4)
MIN TYP
± 145
MAX
UNIT
V
0.1 %/oC
± 0.15
± 150
± 2.2
± 180
± 0.6
±3
V
A
V
mA
± 5 kV/µs
± 10
70 150
µA
pF
NOTES: 5. These parameters must be measured using pulse techniques, tw = 100 µs, duty cycle ≤ 2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum)..
PRODUCT INFORMATION
2
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