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Sharp Microelectronics |
PC3SD11NTZB/PC3SD11NTZC
PC3SD11NTZB
PC3SD11NTZC
s Features
1. Isolation voltage between input and output (Viso (rms):5kV)
2. High critical rate of rise of OFF-state voltage
(dV/dt:MIN. 1 000V/µs)
3. Recognized by UL, file No. E64380
4. VDE:Under application (optionally available)
❈ PC3SD11NTZB, PC3SD11NTZC are for 200V line
s Applications
1. Home appliances
2. OA equipment, FA equipment
3. SSRs
s Absolute Maximum Ratings
(Ta=25°C)
Input
Parameter
*1 Forward current
Reverse voltage
*1 RMS ON-state current
Symbol
IF
VR
IT (rms)
Rating
50
6
0.1
Unit
mA
V
A
Output Peak one cycle surge current Isurge 1.2 (50Hz sine wave) A
Repetitive peak OFF-state voltage VDRM
*2 Isolation voltage Viso (rms)
600
5
V
kV
Operating temperature
Storage temperature
Soldering temperature
Topr
Tstg
Tsol
−30 to +100
−55 to +125
260 (For 10s)
°C
°C
°C
*1 The derating factors of absolute maximum ratings due to ambient temperature are
shown in Fig.1, 2
*2 AC for 1 min, 40 to 60%RH, f=60Hz
www.DataSheet4U.com
Phototriac Coupler for
Triggering
s Outline Dimensions
6 54
Anode
mark
3SD11
CTR
1
Rank mark
2
3 0.6±0.2
1.2±0.3
7.12±0.3
(Unit : mm)
Internal connection
diagram
654
NC
123
7.62±0.3
0.5±0.1 2.54±0.25
0.26±0.1
θ θ=0 to 13˚
θ
1 Anode
2 Cathode
3 NC
4 Anode, Cathode
5 No external connection
6 Anode, Cathode
❈ Pin 5 is not allowed external connection
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3SD11NTZB/PC3SD11NTZC
s Electro-optical Characteristics
Input
Output
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Repetitive peak OFF-state current IDRM
ON-state voltage
VT
Holding current
IH
Critical rate of rise of OFF-state voltage dV/dt
Transfer
charac-
teristics
PC3SD11NTZB
Minimum trigger current
PC3SD11NTZC
Isolation resistance
Turn-on time
IFT
RISO
ton
Conditions
IF=20mA
VR=3V
VD=VDRM
IT=0.1A
VD=6V
VD=1/√−2 • VDRM
VD=6V, RL=100Ω
DC=500V, 40 to 60%RH
VD=6V, RL=100Ω, IF=20mA
MIN.
−
−
−
−
0.1
1 000
−
−
5×1010
−
TYP.
1.2
−
−
−
−
2 000
−
−
1011
−
(Ta=25˚C)
MAX. Unit
1.4 V
10−5 A
10−6 A
2.5 V
3.5 mA
− V/µs
7
mA
5
−Ω
100 µs
Fig.1 RMS ON-state Current vs. Ambient
Temperature
175
150
125
100
75
50
25
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
www.DataSheet4U.com Ambient temperature Ta (˚C)
Fig.3 Forward Current vs. Forward Voltage
100
50
20
10
5
2
1
0.9
Ta=75˚C
50˚C
25˚C
0˚C
−25˚C
1 1.1 1.2 1.3 1.4
Forward voltage VF (V)
1.5
Fig.2 Forward Current vs. Ambient
Temperature
70
60
50
40
30
20
10
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (˚C)
Fig.4 Minimum Trigger Current vs. Ambient
Temperature
10
VD=4V
8
6
4
2
0
−40 −20 0
20 40 60 80
Ambient temperature Ta (˚C)
100
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