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INCHANGE |
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD751/751A
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)- BD751
= 120V(Min)- BD751A
·High Power Dissipation
·Complement to Type BD750/750A
APPLICATIONS
·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
BD751
BD751A
100
130
V
VCEO(SUS) Collector-Emitter Voltage
BD751
BD751A
90
120
V
VEBO Emitter-Base Voltage
7V
IC Collector Current-Continuous
20 A
IB Base Current-Continuous
5A
PC Collector Power Dissipation@TC=25℃ 200
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD751/751A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD751
BD751A
IC=100mA ; IB=0
VCE(sat)
Collector-Emitter
Saturation Voltage
BD751
IC= 7.5A; IB= 0.75A
BD751A IC= 5A; IB= 0.5A
VBE(sat)
Base-Emitter
Saturation Voltage
BD751
IC= 7.5A; IB= 0.75A
BD751A IC= 5A; IB= 0.5A
ICEV
Collector
Cutoff Current
BD751
BD751A
VCEV= 100V;VBE(off)= 1.5V
VCEV= 130V;VBE(off)= 1.5V
IEBO Emitter Cutoff Current
VEB= 7V; IC=0
hFE DC Current Gain
BD751
IC= 7.5A ; VCE= 2V
BD751A IC= 5A ; VCE= 2V
fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
90
V
120
1.5
V
1.0
1.8
V
1.8
0.5
mA
0.5
1.0 mA
15 60
25 100
4 MHz
isc website:www.iscsemi.cn
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