CMLT3946EG 반도체 회로 부품 판매점
SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS
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 Central Semiconductor |
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier
and switching applications.
SOT-563 CASE
* Device is Halogen Free by design
ENHANCED SPECIFICATIONS:
♦ BVCBO from 40V MIN to 60V MIN (PNP)
♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)
MARKING CODES: CMLT3904E:
CMLT3906E:
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
L04
L06
L46
C4G
C6G
46G
♦ hFE from 60 MIN to 70 MIN (NPN/PNP)
♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
SYMBOL
VCBO
60
Collector-Emitter Voltage
♦Emitter-Base Voltage
VCEO
VEBO
40
6.0
Continuous Collector Current
IC 200
Power Dissipation (Note 1)
PD 350
Power Dissipation (Note 2)
PD 300
Power Dissipation (Note 3)
PD 150
Operating and Storage Junction Temperature
Thermal Resistance
TJ, Tstg
ΘJA
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN TYP
TYP MAX
ICEV
♦BVCBO
VCE=30V, VEB=3.0V
IC=10μA
--
60 115
- 50
90 -
BVCEO
♦BVEBO
♦VCE(SAT)
♦VCE(SAT)
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
40 60
6.0 7.5
- 0.057
- 0.100
55
7.9
0.050
0.100
-
-
0.100
0.200
VBE(SAT)
IC=10mA, IB=1.0mA
0.65 0.75
0.75 0.85
VBE(SAT)
♦hFE
♦hFE
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
- 0.85
90 240
100 235
0.85 0.95
130 -
150 -
hFE
♦hFE
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
100 215
70 110
150 300
120 -
hFE VCE=1.0V, IC=100mA
30 50
♦ Enhanced Specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
55
-
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
R6 (29-June 2015)
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN MAX
fT VCE=20V, IC=10mA, f=100MHz
Cob VCB=5.0V, IE=0, f=1.0MHz
Cib VBE=0.5V, IC=0, f=1.0MHz
hie VCE=10V, IC=1.0mA, f=1.0kHz
hre VCE=10V, IC=1.0mA, f=1.0kHz
hfe VCE=10V, IC=1.0mA, f=1.0kHz
hoe VCE=10V, IC=1.0mA, f=1.0kHz
NF VCE=5.0V, IC=100μA, RS =1.0kΩ
f=10Hz to 15.7kHz
300
4.0
8.0
1.0 12
0.1 10
100 400
1.0 60
4.0
td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
35
35
200
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
pF
kΩ
x10-4
μS
dB
ns
ns
ns
ns
CMLT3904E
CMLT3904EG*
CMLT3906E
CMLT3906EG*
* Device is Halogen Free by design
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3946E
CMLT3946EG*
R6 (29-June 2015)
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CMLT3946EG transistor
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국내 전력반도체 판매점
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관련 데이터시트
CMLT3946E
SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS - Central Semiconductor Corp
CMLT3946EG
SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS - Central Semiconductor