|
Kexin |
SMD Type
TransistIoCrs
Switching Transistor
FMMT722
Features
625mW power dissipation.
IC CONT 2.5A.
IC up to 10A peak pulse current.
Excellent hfe characteristics up to 10A (pulsed).
Extremely low saturation voltage e.g. 10mV typ..
Exhibits extremely low equivalent on-resistance; RCE(sat) .
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj,Tstg
Rating
-70
-70
-5
-3
-1.5
-500
625
-55 to +150
Unit
V
V
V
A
A
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
www.kexin.com.cn 1
SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain *
Current-gain-bandwidth product
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp 300ìs; d 0.02.
Marking
Marking
722
FMMT722
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-60V
IEBO VEB=-4V
IC=-0.1A, IB=-10mA
VCE(sat)
IC=-0.5A, IB=-20mA
IC=-1A, IB=-100mA
IC=-1.5A, IB=-200mA
VBE(sat) IC=-1.5A,IB=-200mA
VBE(ON) IC=-1.5A,VCE=-5V
IC=-10mA, VCE=-5V
hFE
IC=-0.1A, VCE=-5V
IC=-1A, VCE=-5V
IC=-1.5A, VCE=-5V
fT IC=-50mA,VCE=-10V,f=100MHz
Cobo VCB=-10V,f=1MHz
t(on) VCC=-50V, IC=-0.5A
t(off) IB1=-IB2=-50mA
TransistIoCrs
Min Typ Max Unit
-70 -150
V
-70 -125
V
-5 -8.8
V
-100 nA
-100 nA
-35
-135
-140
-175
-50
-200
-220
-260
mV
0.94 -1.05 V
-0.78 -1.0
300 470
300 450
175 275
40 60
V
150 200
MHz
14 20 pF
40 ns
700 ns
2 www.kexin.com.cn
|