KTD1347 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTB985.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
RATING
60
50
6
3
6
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
KTD1347
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE (1) (Note)
hFE (2)
VCE(sat)
VBE(sat)
fT
Cob
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100Ὠ
VCE=2V, IC=3A
IC=2A, IB=100Ὠ
IC=2A, IB=100Ὠ
VCE=10V, IC=50Ὠ
VCB=10V, IE=0, f=1ὲ
Switching
Time
Turn-on Time
Storage Time
ton
tstg
PDWC =<=210%µs I B1
INPUT
VR
50
R8
I B2
100µ
25
470µ
Fall Time
tf
-5V
10IB1=-10IB2 =I C=1A
Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
25V
MIN.
-
-
100
35
-
-
-
-
TYP. MAX. UNIT.
- 1ὧ
- 1ὧ
- 400
--
0.19 0.5
V
0.94 1.2
V
150 -
25 -
ὲ
ὸ
- 70 -
- 650 -
nS
- 35 -
1999. 11. 30
Revision No : 1
1/3
KTD1347
I C - VCE
5.0
100mA
80mA
4.0 60mA
40mA
3.0 20mA
2.0 10mA
5mA
1.0
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
3.2
VCE =2V
2.8
I C - VBE
2.4
2.0
1.6
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0
BASE EMITTER VOLTAGE VBE (V)
1.2
I C - VCE
2.0 8mA
1.8 7mA
1.6 6mA
1.4
5mA
1.2
1.0 4mA
0.8 3mA
0.6 2mA
0.4 1mA
0.2
0 IB=0
0 2 4 6 8 10 12 14 16 18 20
COLLECTOR EMITTER VOLTAGE VCE (V)
h FE - I C
1k
VCE =2V
500
300
100
50
30
10
0.01
0.03 0.1 0.3 1
3
COLLECTOR CURRENT I C (A)
10
VBE(sat) - I C
10
I C/IB =20
5
3
1 Ta=-25 C
0.5 Ta=25 C
0.3
Ta=75 C
0.1
0.01
0.03 0.1 0.3
1
3
COLLECTOR CURRENT IC (A)
10
1999. 11. 30
Revision No : 1
1K
IC/IB =20
500
300
V CE(sat) - I C
100
50
30
10
0.01
Ta=75 C
Ta=25 C
Ta=-25 C
0.03 0.1 0.3
1
3
COLLECTOR CURRENT I C (A)
10
2/3
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KTD1347 transistor
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