BUJD203AD 반도체 회로 부품 판매점
NPN power transistor
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 NXP Semiconductors |
BUJD203AD
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface-mountable package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot total power
dissipation
see Figure 3; Tmb ≤ 25 °C
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
DC current gain
IC = 500 mA; VCE = 5 V;
see Figure 12; Tmb = 25 °C
VCE = 5 V; IC = 3 A; Tmb = 25 °C;
see Figure 12
VCEOsus
collector-emitter
IB = 0 A; LC = 25 mH; IC = 10 mA;
sustaining voltage see Figure 7; see Figure 8
Min Typ Max Unit
- - 4A
- - 80 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
B base
C collector[1]
mb
E emitter
C mounting base; connected to
collector
2
13
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
Graphic symbol
C
B
E
sym131
Table 3. Ordering information
Type number
Package
Name
BUJD203AD
DPAK
4. Limiting values
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
VCBO
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
VBE = 0 V
IE = 0 A
IB = 0 A
DC; see Figure 1; see Figure 2; see Figure 4
see Figure 1; see Figure 2; see Figure 4
DC
Tmb ≤ 25 °C; see Figure 3
Min Max Unit
- 850 V
- 850 V
- 425 V
- 4A
- 8A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
BUJD203AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
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BUJD203AD transistor
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