BUJ303CD 반도체 회로 부품 판매점
NPN power transistor
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 NXP Semiconductors |
BUJ303CD
NPN power transistor
8 November 2012
Product data sheet
1. Product profile
1.1 General description
High voltage high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
• Fast switching
• Low thermal resistance
• Surface mountable package
• Tight DC gain spreads
• Very high voltage capability
• Very low switching and conduction losses
1.3 Applications
• DC-to-DC converters
• High frequency electronic lighting ballasts
• Inverters
• Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
Fig. 1; Fig. 2; Fig. 4
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 10 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 250 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 800 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
Min Typ Max Unit
- - 5A
- - 80 W
- - 1050 V
28 34 47
35 43 57
31 37 48
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NXP Semiconductors
BUJ303CD
NPN power transistor
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 B base
mb
2 C collector[1]
3 E emitter
mb C
mounting base; connected to
collector
2
13
DPAK (SOT428)
Graphic symbol
C
B
E
sym123
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUJ303CD
DPAK
Description
Version
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
collector-emitter peak voltage VBE = 0 V
VCEO
collector-emitter voltage
IB = 0 A
IC collector current
Fig. 1; Fig. 2; Fig. 4
ICM peak collector current
IB base current
IBM peak base current
Ptot
total power dissipation
Tmb ≤ 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 1050 V
- 400 V
- 5A
- 10 A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
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BUJ303CD transistor
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