파트넘버.co.kr KTC3295 데이터시트 PDF


KTC3295 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
KTC3295 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
High hFE : hFE=600 3600.
Noise Figure : 0.5dB(Typ.) at f=100Hz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
60
50
5
150
30
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3295
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
hFE Rank
TType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE (Note)
VCE(sat)
fT
Cob
Noise Figure
NF (1)
NF (2)
Note : hFE Classification A:600 1800 , B:1200 3600
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA,
f=100Hz, Rg=10k
VCE=6V, IC=0.1mA,
f=1kHz, Rg=10k
2002. 4. 9
Revision No : 3
MIN.
-
-
600
-
100
-
TYP. MAX. UNIT
- 0.1
A
- 0.1
A
- 3600
0.12 0.25
V
250 - MHz
3.5 - pF
- 0.5 -
dB
- 0.3 -
1/3

KTC3295 데이터시트, 핀배열, 회로
KTC3295
I C - VCE
160
400 COMMON
200
EMITTER
Ta=25 C
120
100
80
80 60
50
40
40
30
20
I B =10µA
0
0
02468
COLLECTOR EMITTER VOLTAGE VCE (V)
h FE - IC
5k
3k
Ta=100 C
Ta=25 C
1k Ta=-25 C
500
300
100
50
30
10
0.1
COMMON EMITTER
VCE =6V
0.3 1
3 10 30 100 300
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
3
COMMON EMITTER
IC /I B =10
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
0.3 1 3 10 30 100 300
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
30
COMMON EMITTER
I C /I B =10
10 Ta=25 C
5
3
1
0.5
0.3
0.1
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
I C - VBE
160
COMMON
EMITTER
VCE =6V
120
80
40
0
0 0.4 0.8 1.2 1.6
BASE EMITTER VOLTAGE VBE (V)
2002. 4. 9
Revision No : 3
fT - IE
5k
3k
VCC =10V
Ta=25 C
1k
500
300
100
50
30
10
-0.1 -0.3 -1
-3 -10 -30 -100 -300
EMITTER CURRENT I E (mA)
2/3



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KTC3295 transistor

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KTC3295

EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER) - KEC(Korea Electronics)



KTC3295

EPITAXIAL PLANAR NPN TRANSISTOR - KEC