CEP20A03 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 CET |
CEP20A03/CEB20A03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V.
RDS(ON) = 3 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
197
124
788
139
1.1
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
800
40
-55 to 150
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Limit
0.9
62.5
Units
C/W
C/W
Rev 1. 2012.Jun
http://www.cetsemi.com
CEP20A03/CEB20A03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Gate input resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
Rg
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
f=1MHz,open Drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 15A,
VGS = 4.5V, RGEN = 1Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 50A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 30A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, IAS = 40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
30
1
Typ
1.6
2
2
7950
1055
740
41
32
92
30
96
24
39
Max Units
1
100
-100
V
µA
nA
nA
3V
2 mΩ
3 mΩ
Ω
pF
pF
pF
82 ns
64 ns
184 ns
60 ns
125 nC
nC
nC
115 A
1.2 V
2
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( cet )
CEP20A03 transistor
데이터시트 다운로드 :
[ CEP20A03.PDF ]
[ CEP20A03 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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