NSBC114TDP6 반도체 회로 부품 판매점
Dual NPN Bias Resistor Transistors
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 ON Semiconductor |
MUN5215DW1,
NSBC114TDXV6,
NSBC114TDP6
Dual NPN Bias Resistor
Transistors
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5215DW1T1G
SOT−363
3,000 / Tape & Reel
NSVMUN5215DW1T1G*
SOT−363
3,000 / Tape & Reel
NSBC114TDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC114TDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBC114TDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
7E M G
G
1
SOT−363
CASE 419B
7E M G
G
1
SOT−563
CASE 463A
MG
1G
SOT−963
CASE 527AD
7E/R
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTC114TD/D
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5215DW1 (SOT−363) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5215DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC114TDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC114TDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC114TDP6 (SOT−963) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBC114TDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
TJ, Tstg
Max Unit
187 mW
256
1.5 mW/°C
2.0
670 °C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357 mW
2.9 mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
231 mW
269
1.9 mW/°C
2.2
540 °C/W
464
339
408
2.7
3.3
369
306
−55 to +150
mW
mW/°C
°C/W
°C
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NSBC114TDP6 transistor
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