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SavantIC |
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4581
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
·Switching power transistor
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
600
450
7
10
20
4
8
65
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.92
UNIT
/W
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4581
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
IEBO Emitter cut-off current
At rated voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=5A;RL=30D
IB1=1A; IB2=2A
VBB2=4V
MIN TYP. MAX UNIT
1.0 V
1.5 V
450 V
0.1 mA
0.1 mA
10
5
20
MHz
0.5 µs
2.0 µs
0.2 µs
2
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