파트넘버.co.kr LMUN2241LT1G 데이터시트 PDF


LMUN2241LT1G 반도체 회로 부품 판매점

Bias Resistor Transistors



Leshan Radio Company 로고
Leshan Radio Company
LMUN2241LT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
ULNM22U11NLT212S1e1riLesT1G
SERIES
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
3
1
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space and Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
2
SOT–23 (TO–236AB)
PIN 1
BASE
(INPUT)
R
1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Ordering Information
Rating
Symbol Value
Unit
Device
Package
Shipping
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C
(Note 1.) Derate above 25°C
VCBO
VCEO
IC
PD
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LMUN2211LT1G
A8A
50
50
100
*246
1.5
R1(K)
10
Vdc
Vdc
mAdc
mW
°C/W
R2(K)
10
LMUN22XXLT1G
LMUN22XXLT3G
SOT23
SOT23
3000/Tape&Reel
10000/Tape&Reel
ORDERING INFORMATION
Device
Package
Shipping
LMUN2211LT1G SOT–23 3000/Tape & Reel
LMUN2212LT1G SOT–23 3000/Tape & Reel
LMUN2212LT1G
A8B 22
22
LMUN2213LT1G SOT–23 3000/Tape & Reel
LMUN2213LT1G
A8C 47
47
LMUN2214LT1G SOT–23 3000/Tape & Reel
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
A8D
A8E
A8F
A8G
A8H
A8J
A8K
10
10
4.7
1.0
2.2
4.7
4.7
47
1.0
2.2
4.7
47
LMUN2215LT1G SOT–23
LMUN2216LT1G SOT–23
LMUN2230LT1G SOT–23
LMUN2231LT1G SOT–23
LMUN2232LT1G SOT–23
LMUN2233LT1G SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
LMUN2234LT1G
A8L 22
47
LMUN2234LT1G SOT–23 3000/Tape & Reel
LMUN2235LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
A8M
A8R
A8T
A8U
2.2
2.2
47
100
47
LMUN2235LT1G SOT–23
LMUN2238LT1G SOT–23
LMUN2241LT1G SOT–23
LMUN2241LT1G SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
1/16


LMUN2241LT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
LMUN2211LT1G Series
THERMAL CHARACTERISTICS
Rating
Thermal Resistance – Junction-to-Ambient (Note 1.)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
RθJA
TJ, Tstg
TL
Value
508
–55 to +150
260
10
Unit
°C/W
°C
°C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
ICBO
ICEO
IEBO
– 100 nAdc
– 500 nAdc
– 0.5 mAdc
– 0.2
– 0.1
– 0.2
– 0.9
– 1.9
– 4.3
– 2.3
– 1.5
– 0.18
– 0.13
– 0.2
– 4.0
– 0.2
– 0.1
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2.)
V(BR)CBO
V(BR)CEO
50
50
– Vdc
– Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
hFE
35 60
60 100
80 140
80 140
160 350
160 350
3.0 5.0
8.0 15
15 30
80 200
80 150
80 140
160 350
160 350
160 350
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) LMUN2230LT1G/LMUN2231LT1G
(IC = 10 mA, IB = 1 mA) LMUN2215LT1G/LMUN2216LT1G
LMUN2232LT1G/LMUN2233LT1G/LMUN2234LT1G/
LMUN2235LT1G/LMUN2238LT1G/LMUN2240LT1G
VCE(sat)
– 0.25 Vdc
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
2/16




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LMUN2241LT1G transistor

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