TD422BL 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 NIKO-SEM |
NIKO-SEM
N-Channel Enhancement Mode
TD422BL
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ
ID
69A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
69
45
180
41
84
50
20
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A
TYPICAL
MAXIMUM
2.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
LIMITS
MIN TYP MAX
UNIT
30
1.2 1.7
2.8
V
±100 nA
1
10 A
180 A
REV 0.9
Apr-11-2011
1
NIKO-SEM
N-Channel Enhancement Mode
TD422BL
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
7.8
4.6
60
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 15V, f = 1MHz
1850
270
Reverse Transfer Capacitance
Crss
230
Gate Resistance
Rg VGS =0V, VDS = 0V, f = 1MHz
1.1
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V,
ID = 20A
VDS = 15V ,
ID 20A, VGS = 10V, RGEN =6Ω
36.9
6.3
10.5
22
40
164
85
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A , VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
2Independent of operating temperature.
3Package limitation current is 60A
30
25
9.5
6
69
1.3
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 0.9
Apr-11-2011
2
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: NIKO-SEM
( niko-sem )
TD422BL transistor
데이터시트 다운로드 :
[ TD422BL.PDF ]
[ TD422BL 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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