TPCM8002-H 반도체 회로 부품 판매점
Silicon N-Channel MOS Type Field Effect Transistor
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 Toshiba Semiconductor |
TPCM8002-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCM8002-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
0.8
8
0.25±0 . 05
0.05 M A
5
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 9.3 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 4.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 76 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.2＋－00.2
14
3.5±0. 2
0.55
A
0.05 S
S1
4
Absolute Maximum Ratings (Ta = 25°C)
2.75±0 . 2
Characteristic
Symbol
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25°C) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 4, refer to the next page.
Rating
30
30
±20
30
90
30
2.3
1.0
117
30
2.4
150
-55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
0.8±0 .1
85
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-4L1A
Weight: 0.028 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2010-03-09
Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to case
(Tc=25°C)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-c)
Rth (ch-a)
Rth (ch-a)
Max
4.17
54.3
125
Unit
°C/W
°C/W
°C/W
Marking (Note 5)
M8002
H
Part No. (or abbreviation code)
Lot No.
TPCM8002-H
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 30 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2 2010-03-09
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TPCM8002-H transistor
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