KHB4D0N65P 반도체 회로 부품 판매점
N CHANNEL MOS FIELD EFFECT TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
VDSS=650V, ID=4A
Drain-Source ON Resistance
: RDS(ON)=3.0 @VGS = 10V
Qg(typ.)=20nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D0N65P KHB4D0N65F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
650
30
4.0 4.0*
16 16*
260
10.6
4.5
106 36
0.85 0.29
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.18
3.47 /W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5 /W
* : Drain current limited by maximum junction temperature.
KHB4D0N65P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KHB4D0N65F
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
D
2007. 3. 26
Revision No : 1
G
S
1/7
KHB4D0N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Drain Cut-off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
Vth VDS=VGS, ID=250 A
IDSS VDS=650V, VGS=0V,
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=2.0A
gFS VDS=50V, ID=2.0A (Note4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=520V, ID=4.0A
VGS=10V
(Note4, 5)
VDD=325V, RG=25
ID=4.0A
(Note4, 5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=4.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=4.0A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =30mH, IS=4A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 4.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
(Note 4)
MIN. TYP. MAX. UNIT
650 - - V
- 0.95 - V/
2.0 - 4.0 V
- - 10 A
- - 100 nA
- 2.4 3.0
- 3.8 -
S
- 20 25
- 4.0 - nC
- 7.5 -
- 29.5 69
- 63.4 136.7
ns
- 63.2 136.4
- 30 70
- 645 838
- 60 78 pF
- 7.4 9.6
- - 4.0
A
- - 16
- - 1.4 V
- 350 -
ns
- 2.7 -
C
2007. 3. 26
Revision No : 1
2/7
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KHB4D0N65P transistor
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KHB4D0N65F
N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC
KHB4D0N65P
N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC