파트넘버.co.kr KTC2983L 데이터시트 PDF


KTC2983L 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
KTC2983L 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTA1225D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
160
160
5
1.5
1.0
1.0
10
150
-55 150
UNIT
V
V
V
A
A
W
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2
E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2
J 0.5+_ 0.1
L K 2.0+_ 0.2
L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
DC Current Gain
hFE(Note)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70~140, Y:120~240
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
IE=1mA, IC=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=10V, IC=100mA
VCB=10V, IE=0, f=1MHz
IPAK
MIN.
-
-
160
5.0
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
25
MAX.
1.0
1.0
-
-
240
1.5
1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2003. 3. 27
Revision No : 3
1/3


KTC2983L 데이터시트, 핀배열, 회로
KTC2983D/L
I C - VCE
1.0
12mA 8mA 6mA
COMMON
EMITTER
0.8 Tc=25 C
0.6 4mA
0.4
I B=2mA
0.2
0mA
0
0 2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - I C
300
Tc=100 C
Tc=25 C
100
Tc=-25 C
50
30
COMMON EMITTER
VCE =5V
10
0.003
0.01 0.03 0.1 0.3
1
COLLECTOR CURRENT I C (A)
3
VCE(sat) - IC
1
COMMON EMITTER
0.5 IC/I B=10
0.3
Tc=100 C
Tc=25 C
0.1 Tc=-25 C
0.05
0.03
0.003
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT I C (A)
3
f T - IC
300
100
50
30
COMMON EMITTER
VCE =10V
Tc=25 C
0
0.005 0.01 0.03 0.1
0.3
1
COLLECTOR CURRENT IC (A)
2003. 3. 27
Revision No : 3
1.0
COMMON
EMITTER
0.8 VCE =5V
0.6
I C - VBE
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
Pc - Ta
30
1 Tc=25 C
25 2 Ta=25 C
20
15
1
10
52
0
0 20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta ( C)
2/3




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: KEC

( kec )

KTC2983L transistor

데이터시트 다운로드
:

[ KTC2983L.PDF ]

[ KTC2983L 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


KTC2983D

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) - KEC(Korea Electronics)



KTC2983D

EPITAXIAL PLANAR NPN TRANSISTOR - KEC



KTC2983L

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) - KEC(Korea Electronics)



KTC2983L

EPITAXIAL PLANAR NPN TRANSISTOR - KEC



KTC2983L

EPITAXIAL PLANAR NPN TRANSISTOR - KEC