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SEMTECH |
ST 2SC1675
NPN Silicon Epitaxial Planar Transistor
FM/AM RF AMP, MIX, CONV, OSC, IF
The transistor is subdivided into three groups, R, O, Y,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
FEATURES:
Collector-Base Voltage: VCEO=30V
High Current Gain Bandwidth Product: fT=300MHz (TYP.)
Low Collector Capacitance: COB=2.0pF (TYP.)
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
50
30
5
50
250
150
-55 to +150
G S P FORM A IS AVAILABLE
Unit
V
V
V
mA
mW
?
?
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
®
ST 2SC1675
Characteristics at Ta=25 OC
DC Current Gain
at VCE=6V, IC=1mA
Symbol
Min.
R hFE 40
O hFE 70
Y hFE 120
Collector-Emitter Saturation Voltage
at IC=10mA, IB=1mA
Base–Emitter On Voltage
at VCE=6V, IC=1mA
Collector-Base Breakdown Voltage
at IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
at IC=5mA, IB=0
Emitter-Base Breakdown Voltage
at IE=10µA, IC=0
Collector Cut-off Current
at VCB=50V, IE=0
Emitter Cut-off Current
at VEB=5V, IC=0
Current Gain Bandwidth Product
at VCE=6V,IC=1mA
Output Capacitance
at VCB=6V, IE=0, f=1MHz
VCE(sat)
VBE(on)
BVCBO
BVCEO
BVEBO
ICBO
IEBO
fT
Cob
-
-
50
30
5
-
-
150
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
0.08
0.67
-
-
-
-
-
300
2.0
Max.
80
140
240
0.3
0.75
-
-
-
0.1
0.1
-
2.5
Unit
-
-
-
V
V
V
V
V
µA
µA
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 19/12/2003
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