DTC114TKA 반도체 회로 부품 판매점
NPN 100mA 50V Digital Transistors
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 ROHM Semiconductor |
DTC114T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
Value
50V
100mA
10kW
lFeatures
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTA114T series
6) Complex transistors :UMH8N /IMH8A
/EMG4 /UMG4N /FMG4A （PNP type）
7) Lead Free/RoHS Compliant.
lOutline
VMT3
Collector
Base
Emitter
DTC114TM
(SC-105AA)
EMT3
Collector
Base
Emitter
DTC114TE
SOT-416 (SC-75A)
UMT3
Collector
Base
Emitter
DTC114TUA
SOT-323 (SC-70)
EMT3F
Base
Collector
Emitter
DTC114TEB
(SC-89)
UMT3F
Collector
Base
Emitter
DTC114TUB
(SC-85)
SMT3
Collector
Base
Emitter
DTC114TKA
SOT-346 (SC-59)
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
DTC114TM
DTC114TEB
DTC114TE
DTC114TUB
DTC114TUA
DTC114TKA
VMT3
EMT3F
EMT3
UMT3F
UMT3
SMT3
Package
size
(mm)
1212
1616
1616
2021
2021
2928
Taping
code
T2L
TL
TL
TL
T106
T146
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
180 8 3,000
180 8 3,000
180 8 3,000
Marking
04
04
04
04
04
04
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/9
2012.04 - Rev.A
DTC114T series
lAbsolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
DTC114TM
DTC114TEB
DTC114TE
DTC114TUB
DTC114TUA
DTC114TKA
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC *2
Tj
Tstg
Data Sheet
Values
50
50
5
100
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
mW
C
C
lElectrical characteristics(Ta = 25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current gain
hFE
Input resistance
R1
Conditions
IC= 50μA
IC= 1mA
IE= 50μA
VCB = 50V
VEB = 4V
IC / IB= 10mA / 1mA
VCE= 5V , IC= 1mA ,
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
50
50
5
-
-
-
100
7
-
Typ.
-
-
-
-
-
-
250
10
250
Max.
-
-
-
0.5
0.5
0.3
600
13
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/9
2012.04 - Rev.A
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DTC114TKA transistor
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