DTA114EUA 반도체 회로 부품 판매점
PNP -100mA -50V Digital Transistors
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 ROHM Semiconductor |
DTA114E series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Outline
Parameter
Value
VMT3
VCC
IC(MAX.)
R1
R2
50V
100mA
10k
10k
OUT
IN
GN
DTA114EM
(SC-105AA)
EMT3
Features
1) Built-In Biasing Resistors, R1 = R2 = 10k.
2) Built-in bias resistors enable the configuration of
OUT
IN
GN
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
DTA114EE
SOT-416 (SC-75A)
UMT3
OUT
of the input. They also have the advantage of
completely eliminating parasitic effects.
IN
GND
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
DTA114EUA
SOT-323 (SC-70)
5) Complementary NPN Types Available.(DTC114E series)
6) Complex transistors :EMB11/ UMB11N/ IMB11A/ Inner circuit
UMA9N/ FMA9A （PNP type）
7) Lead Free/RoHS Compliant.
R1
IN
Application
R2
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
IN
EMT3F
OUT
IN
GN
DTA114EEB
(SC-89)
UMT3F
OUT
IN
GND
DTA114EUB
(SC-85)
SMT3
OUT
IN
GND
DTA114EKA
SOT-346 (SC-59)
OUT
GND(+)
OUT
Packaging specifications
Part No.
Package
DTA114EM
DTA114EEB
DTA114EE
DTA114EUB
DTA114EUA
DTA114EKA
VMT3
EMT3F
EMT3
UMT3F
UMT3
SMT3
Package
size
(mm)
1212
1616
1616
2021
2021
2928
Taping
code
T2L
TL
TL
TL
T106
T146
GND(+)
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
180 8 3,000
180 8 3,000
180 8 3,000
Marking
14
14
14
14
14
14
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/10
2012.02 - Rev.E
DTA114E series
Absolute maximum ratings (Ta = 25C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
DTA114EM
DTA114EEB
DTA114EE
DTA114EUB
DTA114EUA
DTA114EKA
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
50
40 to 10
50
100
150
200
150
55 to 150
Unit
V
V
mA
mA
mW
mW
C
C
Electrical characteristics(Ta = 25C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
Output current
II
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
3
-
-
-
20
7
0.8
-
Typ. Max. Unit
- 0.5
V
--
0.1 0.3
V
- 0.88 mA
- 0.5 A
---
10 13 k
1 1.2 -
250 - MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.02 - Rev.E
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DTA114EUA transistor
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