H11A617 반도체 회로 부품 판매점
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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 Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
PACKAGE
H11A817 SERIES
H11AA814 SCHEMATIC
1 4 COLLECTOR
4
2 3 EMITTER
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300%
H11A817: 50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A617A: 40%-80%
H11A817B: 130-260%
H11A617B: 63%-125%
H11A817C: 200-400%
H11A617C: 100%-200%
H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BVCEO of 70V guaranteed
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
H11A617 & H11A817 SCHEMATIC
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VECO
IC
PD
Device
Value
Units
All
-55 to +150
°C
All
-55 to +100
°C
All
260 for 10 sec
°C
All 200 mW
All
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
All
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
50 mA
6
5
V
1.0 A
100 mW
1.33 mW/°C
70 V
6
7V
6
50 mA
150 mW
2.0 mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min Typ* Max Unit
EMITTER
(IF = 60 mA)
H11A617A/B/C/D
1.35 1.65
Input Forward Voltage
(IF = 20 mA)
(IF = ±20 mA)
VF
H11A817/A/B/C/D
H11AA814/A
1.2 1.5
1.2 1.5
V
Reverse Leakage Current
(VR = 6.0 V)
(VR = 5.0 V)
IR
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
DETECTOR
Collector-Emitter Breakdown
Voltage
(IC = 1.0 mA, IF = 0) BVCEO
ALL
70 100
V
Emitter-Collector Breakdown
Voltage
(IE = 100 µA, IF = 0) BVECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7 10
6
V
Collector-Emitter Dark Current
(VCE = 10V, IF = 0)
ICEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
100
1 nA
50
Collector-Emitter Capacitance (VCE = 0 V, f = 1 MHz) CCE
ALL
8 pF
*Typical values at TA = 25°C.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
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( fairchild )
H11A617 transistor
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[ H11A617.PDF ]
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관련 데이터시트
H11A617
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor
H11A617A
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor
H11A617B
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor
H11A617C
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor
H11A617D
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS - Fairchild Semiconductor