NSBC114TF3T5G 반도체 회로 부품 판매점
Digital Transistors
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 ON Semiconductor |
MUN2215, MMUN2215L,
MUN5215, DTC114TE,
DTC114TM3, NSBC114TF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1
Publication Order Number:
DTC114T/D
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping†
MUN2215T1G
8E
SC−59
3000 / Tape & Reel
(Pb−Free)
MMUN2215LT1G, SMMUN2215LT1G
A8E
SOT−23
3000 / Tape & Reel
(Pb−Free)
MUN5215T1G, SMUN5215T1G
8E
SC−70/SOT−323
3000 / Tape & Reel
(Pb−Free)
DTC114TET1G
8E
SC−75
3000 / Tape & Reel
(Pb−Free)
DTC114TM3T5G
8E
SOT−723
8000 / Tape & Reel
(Pb−Free)
NSBC114TF3T5G
K (90°)
SOT−1123
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
* (xx°) = Degree rotation in the clockwise direction.
300
250
200
(1) (2) (3) (4) (5)
150
100
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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NSBC114TF3T5G transistor
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