STB440S 반도체 회로 부품 판매점
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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 SamHop Microelectronics |
STB/P440SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
8 @ VGS=10V
40V 65A
11.5 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
40
±20
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
65
52
IDM -Pulsed b
EAS Avalanche Energy c
191
196
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
62.5
40
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Downloaded from Elcodis.com electronic components distributor
1
Apr,13,2009
www.samhop.com.tw
STB/P440S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
ON CHARACTERISTICS a
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
tD(OFF)
tf
Turn-On DelayTime
Rise Time
Turn-Off DelayTime
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=30A
VGS=4.5V , ID=25A
VDS=5V , ID=30A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=30A,VGS=10V
VDS=20V,ID=30A,VGS=4.5V
VDS=20V,ID=30A,
VGS=10V
40
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle _< 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD=30V,VGS=10V.(See Figure13)
Typ
2
6
8.5
40
1380
233
215
27
72
65
45
33.5
17
3.2
12
0.81
Max Units
1
±100
V
A
nA
3
8
11.5
V
m ohm
m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
10 A
1.3 V
Downloaded from Elcodis.com electronic components distributor
2
Apr,13,2009
www.samhop.com.tw
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( samhop )
STB440S transistor
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STB440S
N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics
