TK11A60D 반도체 회로 부품 판매점
Field Effect Transistor
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 Toshiba Semiconductor |
TK11A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK11A60D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
11
44
45
396
11
4.5
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.73 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-08-12
Electrical Characteristics (Ta = 25°C)
TK11A60D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5.5 A
VDS = 10 V, ID = 5.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±1
⎯ ⎯ 10
600 ⎯
⎯
2.0 ⎯ 4.0
⎯ 0.54 0.65
1.5 6.0
⎯
⎯ 1550 ⎯
⎯7⎯
⎯ 165 ⎯
μA
μA
V
V
Ω
S
pF
tr
10 V
VGS
0V
ID = 5.5 A VOUT
⎯ 25 ⎯
ton
50 Ω
RL = 36 Ω
⎯
60
⎯
ns
tf ⎯ 15 ⎯
VDD ≈ 200 V
toff Duty ≤ 1%, tw = 10 μs
⎯ 110 ⎯
Qg
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 11 A
Qgd
⎯ 28 ⎯
⎯ 18 ⎯ nC
⎯ 10 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 11 A, VGS = 0 V
IDR = 11 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 11 A
⎯ ⎯ 44 A
⎯ ⎯ −1.7 V
⎯ 1300 ⎯
ns
⎯ 13 ⎯ μC
Marking
K11A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to
Lot No.
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2010-08-12
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( toshiba )
TK11A60D transistor
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