GT10G131 반도체 회로 부품 판매점
Insulated Gate Bipolar Transistor
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 Toshiba Semiconductor |
GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak collector current: IC = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Collector power
dissipation(t=10 s)
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
VCES
VGES
VGES
ICP
PC (1)
PC (2)
Tj
Tstg
400
±6
±8
200
1.9
1.0
150
−55~150
V
V
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1.2.3 Emitter
4 Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
Rth (j-a) (1)
Rth (j-a) (2)
Marking (Note 3)
Rating
65.8
125
Unit
°C/W
°C/W
1234
10G131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
VGE = ± 6 V, VCE = 0
VCE = 400 V, VGE = 0
IC = 1 mA, VCE = 5 V
IC = 200 A, VGE = 4 V
VCE = 10 V, VGE = 0, f = 1 MHz
tr 4 V
0
ton
51 Ω
tf VIN: tr <= 100 ns
tf <= 100 ns
≒300V
toff Duty cycle <= 1%
GT10G131
Min Typ. Max Unit
⎯ ⎯ ± 10
⎯ ⎯ 10
0.6 0.9 1.2
⎯ 2.3 ⎯
⎯ 2800 ⎯
μA
μA
V
V
pF
⎯ 2.8 ⎯
⎯ 3.1 ⎯
μs
⎯ 1.8 ⎯
⎯ 2.0 ⎯
Note
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Repetitive rating: pulse width limited by maximum junction temperature.
Note 2a : Device mounted on
a glass-epoxy board (a)
Note 2b : Device mounted on
a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
for COLLECTOR
for EMITTER
for GATE
for GATE
for COLLECTOR
for EMITTER
Note 3: ○ on lower right of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
※ Pb-Free Finish (Only a coating lead terminal) :
It is marking about an underline to a week of manufacture mark.
2 2006-11-02
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( toshiba )
GT10G131 transistor
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상호 : 아이지 인터내셔날
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