TPCP8005-H 반도체 회로 부품 판매점
Field Effect Transistor
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 Toshiba Semiconductor |
TPCP8005-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCP8005-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
85
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 5.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 30 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
11
44
1.68
0.84
78.7
11
0.137
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1132
1.12+-00..1132
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8765
8005H
※
1234
Lot No.
2007-12-25
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Symbol
Rth (ch-a)
Rth (ch-a)
Max
74.4
148.8
Unit
°C/W
°C/W
TPCP8005-H
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 11A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2 2007-12-25
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( toshiba )
TPCP8005-H transistor
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