FJP1943RTU 반도체 회로 부품 판매점
PNP Epitaxial Silicon Transistor
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 Fairchild Semiconductor |
FJP1943
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -15A.
• High Power Dissipation : 80watts.
• High Frequency : 30MHz.
• High Voltage : VCEO= -230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to FJP5200
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
BVCEO
BVEBO
IC
IB
PD
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation(TC=25°C)
Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
November 2008
1
1.Base
TO-220
2.Collector 3.Emitter
Ratings
-230
-230
-5
-15
-1.5
80
0.64
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Ratings
1.25
Units
°C/W
O
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
FJP1943 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
IC=-5mA, IE=0
IC=-10mA, RBE=∞
IE=-5mA, IC=0
VCB=-230V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
Min.
-230
-230
-5
55
35
Typ.
60
-0.4
-1.0
30
360
Max.
-5.0
-5.0
160
-3.0
-1.5
Units
V
V
V
µA
µA
V
V
MHz
pF
Ordering Information
Part Number
FJP1943RTU
FJP1943OTU
Marking
J1943R
J1943O
Package
TO-220
TO-220
Packing Method
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
© 2008 Fairchild Semiconductor Corporation
FJP1943 Rev. B
2
www.fairchildsemi.com
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FJP1943RTU transistor
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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