C1775 반도체 회로 부품 판매점
NPN Transistor - 2SC1775
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 Hitachi Semiconductor |
2SC1775, 2SC1775A
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA872/A
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
http://www.Datasheet4U.com
2SC1775, 2SC1775A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SC1775
90
90
5
50
300
150
–55 to +150
2SC1775A
120
120
5
50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SC1775
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO 90
—
Collector cutoff current ICBO
——
——
DC current transfer ratio hFE1*1
hFE2
400 —
160 —
2SC1775A
Max Min Typ
— 120 —
0.5 —
——
1200 400
— 160
—
—
—
—
Base to emitter voltage VBE
— — 0.75 —
Collector to emitter
saturation voltage
VCE(sat)
—
—
0.5 —
Gain bandwidth product fT
Collector output
capacitance
Cob
— 200 — —
— 1.6 — —
Noise figure
NF — — 5.0 —
—
—
200
1.6
—
— — 1.5 —
Note: 1. The 2SC1775/A is grouped by hFE1 as follows.
EF
400 to 800 600 to 1200
—
Max Unit Test conditions
—V
IC = 1 mA, RBE = ∞
— µA
0.5 µA
1200
—
0.75 V
0.5 V
VCB = 75 V, IE = 0
VCB = 100 V, IE = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V,
IC = 0.1 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
— MHz VCE = 12 V, IC = 2 mA
— pF VCB = 25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = 6 V,
IC = 50 µA,
Rg = 50 kΩ
f = 10
Hz
f=1
kHz
2
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제조업체: Hitachi Semiconductor
( hitachi )
C1775 transistor
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[ C1775.PDF ]
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